Olympus MPlanApo 20X Objective

OLYMPUS MPLANAPO 20X REFLECTED LIGHT OBJECTIVE

🔬 Plan apochromat design with superior chromatic correction
✨ Strehl ratio ≥95% for exceptional wavefront aberration control
📍 0.6 NA / 0.9mm working distance for high-resolution reflected light imaging
👌 Flawless optical condition, as-new performance

🔧 Product Description

The Olympus MPlanApo 20X objective represents the pinnacle of reflected-light microscopy optics, delivering plan apochromat-level chromatic correction and flat-field imaging across the entire field of view. Engineered for industrial metallography, semiconductor inspection, and materials science applications, this objective achieves a Strehl ratio of 95% or better, ensuring minimal wavefront aberration and maximum resolution at the diffraction limit. The 0.6 numerical aperture provides excellent light-gathering capability and resolving power, while the 0.9mm working distance accommodates a variety of sample geometries. Its RMS threading ensures broad compatibility with legacy and modern Olympus industrial microscope platforms, making it an ideal choice for upgrading existing systems or building high-performance reflected-light configurations.

🔎 Typical Applications

• Metallographic analysis and grain structure characterization
• Semiconductor wafer and die inspection
• Surface topography and defect analysis
• Failure analysis and quality control in manufacturing
• Materials science research and phase identification
• Forensic examination of trace evidence

📊 Key Specifications

University purchase orders accepted. Please contact us with any questions regarding compatibility or technical specifications.