Mitutoyo M Plan Apo NIR 50x Objective (NA 0.42, WD 17mm, 480–1800nm, M26)

In stock

SKU: 378-825-17

$4,100.00
The Mitutoyo M Plan Apo NIR 50× Objective is a near-infrared and short-wave infrared (SWIR) optimized plan apochromat objective from Mitutoyo’s M Plan Apo NIR series — delivering 50× magnification with an exceptional 17mm working distance and optimized transmission across an extraordinary 480–1800nm spectral range spanning the full visible, NIR, and SWIR spectrum. Compared to the high-resolution 50× NIR version (NA 0.65, WD 10mm), this version trades some NA for a longer 17mm working distance — the preferred choice when maximum specimen clearance is the priority over maximum resolution.

KEY FEATURES

  • Exceptional spectral range: 480–1800nm (visible + NIR + SWIR) — transmission extending to 1800nm covers the full NIR and into the SWIR, enabling silicon wafer through-inspection, InGaAs camera imaging, SWIR fluorescence, and Raman spectroscopy with long-wavelength excitation lasers (1064nm, 1550nm) well beyond the range of standard NIR objectives (~1000nm)
  • Super long working distance: 17mm — exceptional clearance for a 50× objective, providing ample room for specimens in environmental chambers, cryostats, vacuum systems, and laser processing setups, as well as clearance for beam delivery optics and collection systems
  • NA 0.42, 0.7µm resolving power — practical numerical aperture for a long working distance NIR/SWIR objective at 50×, delivering sub-micron resolution for semiconductor inspection, Raman mapping, and NIR/SWIR imaging with maximum working clearance
  • Plan apochromat (M Plan Apo) correction — Mitutoyo’s highest level of chromatic and spherical aberration correction for accurate, flat-field imaging across the full 480–1800nm spectral range
  • Infinity-corrected, M26 thread — compatible with Mitutoyo FS series microscopes and other infinity-corrected systems with M26 nosepieces
  • 🇯🇵 Mitutoyo quality, made in Japan — precision optical construction for consistent, high-efficiency NIR/SWIR transmission and long service life
  • Catalog number 378-825-17
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Product Overview

The Mitutoyo M Plan Apo NIR 50× (378-825-17) is the long working distance variant of the M Plan Apo NIR 50× series — offering a 17mm working distance at the cost of some NA (0.42 vs. 0.65 for the high-resolution version 378-863-5), making it the preferred choice for applications where specimen clearance is the primary constraint. The 17mm working distance provides practical clearance for the full range of semiconductor inspection fixtures, environmental chambers, cryostats, vacuum systems, and laser processing setups where the 10mm WD of the high-resolution version may be insufficient. The 480–1800nm spectral range is identical to the high-resolution version, enabling the same SWIR applications: through-silicon wafer inspection, InGaAs camera imaging, SWIR fluorescence, and Raman spectroscopy with long-wavelength excitation lasers. At 50× with 0.7µm resolving power, this objective delivers sub-micron resolution for detailed semiconductor inspection and Raman mapping with the added benefit of 17mm working clearance. The plan apochromat correction ensures flat-field imaging with accurate chromatic registration across the full 480–1800nm spectral range. Compatible with Mitutoyo FS series microscopes and other infinity-corrected systems with M26 thread nosepieces. Catalog number 378-825-17.

Technical Specifications

Catalog Number 378-825-17
Magnification 50×
Numerical Aperture (NA) 0.42
Immersion Medium Dry (air)
Working Distance 17.0mm (Super Long Working Distance)
Spectral Range 480–1800nm (Visible + NIR + SWIR)
Resolving Power 0.7µm
Focal Depth 1.6µm
Focal Length 4mm
Field of View (Ø24 eyepiece) Ø0.48mm
Real FOV (1/2" chip camera) 0.10 × 0.13mm
Optical Design M Plan Apo NIR (Plan Apochromat, NIR/SWIR-optimized)
Correction Infinity-corrected (brightfield)
Thread / Mount M26
Compatible Systems Mitutoyo FS series; other infinity-corrected M26 systems
Country of Origin Japan
SKU 378-825-17

Microscope Compatibility

Typical Applications

Silicon wafer backside and through-silicon inspection at 50× requiring maximum working clearance
InGaAs camera imaging requiring SWIR transmission to 1800nm at 50×
Raman spectroscopy mapping with NIR and SWIR excitation lasers at 50×
NIR/SWIR imaging in environmental chambers, cryostats, or vacuum systems requiring 17mm clearance
NIR/SWIR laser processing and beam characterization at 50× with extended working distance
Any 50× NIR/SWIR application where working distance is the priority over maximum NA

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