Nikon CFI TU Plan ELWD 100x Reflected Light Objective (NA 0.80, Infinity)

In stock

SKU: MUE21900

Regular price $6,100.00
The Nikon CFI TU Plan ELWD 100× Reflected Light Objective (NA 0.80) is an extra-long working distance (ELWD) infinity-corrected reflected light objective designed for industrial inspection, materials science, and semiconductor applications — delivering high-resolution 100× reflected light imaging with an exceptional 4.5mm working distance that provides ample clearance for large, thick, or mounted specimens that cannot be accommodated by standard short-working-distance objectives.

KEY FEATURES

  • Extra-long working distance: 4.5mm — exceptional clearance at 100× magnification for imaging large, thick, or mounted specimens, wafers, PCBs, and components that standard 100× objectives cannot reach
  • NA 0.80 at 100× — high numerical aperture for excellent resolution and contrast in reflected light brightfield, DIC, and darkfield imaging
  • Reflected light (epi-illumination) design — optimized for incident light microscopy of opaque specimens including metals, semiconductors, ceramics, and polished surfaces
  • Infinity-corrected, M25 thread — compatible with Nikon CFI series upright and industrial microscopes including Eclipse LV, MA, and Ni series
  • 🇯🇵 Nikon quality, made in Japan — precision optical construction for consistent, high-efficiency light transmission and long service life
  • New — catalog number MUE21900
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Product Overview

The Nikon CFI TU Plan ELWD 100× is a specialized reflected light objective engineered for industrial and materials science applications where standard 100× objectives cannot be used due to specimen size, thickness, or mounting constraints. The 4.5mm working distance is exceptional for a 100× objective — standard 100× reflected light objectives typically offer 0.2–1.0mm of working distance, making them impractical for large wafers, thick substrates, mounted specimens, or components in fixtures. The ELWD design provides the clearance needed to image these specimens without risk of contact between the objective and the specimen surface. The NA 0.80 delivers high resolution and contrast for reflected light brightfield, DIC, and darkfield imaging of metals, semiconductors, ceramics, polished surfaces, and other opaque materials. The TU Plan optical design provides flat-field correction for consistent image quality across the full field of view. Compatible with Nikon CFI series industrial and upright microscopes including Eclipse LV, MA, and Ni series. Supplied new from stock, catalog number MUE21900.

Technical Specifications

Catalog Number MUE21900
Magnification 100×
Numerical Aperture (NA) 0.80
Working Distance 4.5mm (ELWD)
Immersion Medium Dry (air)
Optical Design CFI TU Plan ELWD (Extra-Long Working Distance)
Illumination Reflected light (epi-illumination)
Correction Infinity-corrected
Thread / Mount M25
Compatible Microscopes Nikon CFI Eclipse LV, MA, Ni series
Country of Origin Japan
Condition New
SKU MUE21900

Microscope Compatibility

Typical Applications

Semiconductor wafer and die inspection at 100× with extended working clearance
PCB and electronics component inspection of thick or mounted assemblies
Metallographic examination of large or mounted metal specimens
Ceramics, glass, and advanced materials surface inspection
Quality control inspection of polished and coated surfaces
Any application where standard 100× working distance is insufficient for the specimen
  • Designed for Mixed-Brand Lab Environments

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    Ideal for labs using multiple microscope platforms

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